Performance and Analysis of n-Type Vertically Stacked Nanowires Regarding Harmonic Distortion

  • Cesar Augusto Belchior Carvalho Centro Universitário FEI
  • Genaro Mariniello da Silva
  • Bruna Cardoso Paz
  • Sylvain Barraud
  • Maud Vinet
  • Olivier Faynot
  • Marcelo Antonio Pavanello
Keywords: stacked nanowires, harmonic distortion, MOSFET, SOI transistor

Abstract

This paper studies the harmonic distortion (or non-linearity) of vertically stacked SOI nanosheets with different fin widths and channel lengths. The total harmonic distortion and third order harmonic distortion are used as figures of merit in this work. The four approaches applied verifies the correlation between the harmonic distortions and the variety of transistor’s dimensions available for analysis.

Published
2020-08-11
Section
Special Section on SBMicro2020