Reliability Concerns due to Self-Heating effects in GaN HEMTs

  • B. Padmanabhan
  • D. Vasileska
  • S. M. Goodnick
Keywords: GaN HEMTs, Self-heating, Current collapse

Abstract

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

Published
2020-12-28