Regular Papers

• Table of Contents and Foreword

  Marcelo Antonio Pavanello, Fernando Gehm Moraes

  64 - 70
• On the Variability of the Low-Frequency Noise in UTBOX SOI nMOS-FETs

  Eddy Simoen, Maria G. C. Andrade, Luciano M. Almeida, M. Aoulaiche, C. Caillat, M. Jurczak, Cor Claeys

  71 - 77
• Reliability Concerns due to Self-Heating effects in GaN HEMTs

  B. Padmanabhan, D. Vasileska, S. M. Goodnick

  78 - 82
• Pressure Sensor Systems for Wide Pressure Ranges Integrated by a Combined CMOS- and MEMS- Technology

  Wolfgang Schreiber-Prillwitz, Reinhart Job

  83 - 88
• Detection of Transient Faults in Nanometer Technologies by using Modular Built-In Current Sensors

  Frank Sill Torres, Rodrigo Possamai Bastos

  89 - 97
• A Novel Pseudo NMOS Integrated CC -ISFET Device for Water Quality Monitoring

  Pawan Whig, Syed Naseem Ahmad

  98 - 103
• Selective and Anisotropic Dry Etching of Ge over Si

  Marcelo S. B. Castro, Sebastien Barnola, Barbara Glück

  104 - 109
• Nanowire Tunnel Field Effect Transistors at High Temperature

  Márcio D. V. Martino, Felipe S. Neves, Paula Ghedini Der Agopian, João Antonio Martino, Rita Rooyackers, Cor Claeys

  110 - 115
• Drain Current and Short Channel Effects Modeling in Junctionless Nanowire Transistors

  Renan D. Trevisoli, Rodrigo T. Doria, Michelly de Souza, Marcelo Antonio Pavanello

  116 - 124