Regular Papers

• Table of Contents and Foreword

  Marcelo Antonio Pavanello

  56 - 61
• Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

  Rafael Assalti, Rodrigo T. Doria, Denis Flandre, Michelly de Souza

  62 - 70
• Focal-Plane Compression Imager with Increased Quantization Bit Rate and DPCM Error Modeling

  Fernanda Duarte Vilela Reis de Oliveira, Tiago Monnerat de Faria Lopes, José Gabriel Rodríguez Carneiro Gomes, Fernado Antônio Pinto Barúqui, Antonio Petraglia

  71 - 81
• Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies

  V. T. Itocazu, V. Sonnenberg, J. A. Martino, E. Simoen, Cor Clayes

  82 - 88
• Electrospun Polymeric Fibers Coated With Pd As A Sensitive Layer For Hydrogen Detection

  Ana Neilde R. da Silva, Sebastião Gomes dos Santos Filho, Marcelo Bariatoo A. Fontes

  89 - 94
• An UHF RFID tag characterization methodology including a low-Bcaosqsute rao,n Cdab rleoraw, S-ousa complexity SDR platform for information extraction

  Juán Sebastián Moya Baquero, Fabian L. Cabrera, Fernando Rangel de Sousa

  95 - 100
• Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation

  V. T. Itocazu, K. R. A. Sasaki, V. Sonnenberg, J. A. Martino, E. Simoen, C. Claeys

  101 - 106